A current-perpendicular-to-the-plane (CPP) structure magnetoresistive element includes an electrode layer contacting a magnetoresistive film. A low resistance region is defined to extend rearward along the boundary of the magnetoresistive film from the front end exposed at the medium-opposed surface of the head slider. A high resistance region is defined to extend rearward along the boundary from the rear end of the low resistance region. The high resistance region has a resistivity higher than that of the low resistance region. The high resistance region serves to restrict the path of a sensing current nearest to the medium-opposed surface. The sensing current is allowed to concentrate at a position closest to the medium-opposed surface in the magnetoresistive film. Magnetization sufficiently rotates in the magnetoresistive film near the medium-opposed surface. The CPP structure magnetoresistive element maintains a sufficient variation in the resistance. A sufficient sensitivity can be maintained.