Methods of forming a patterned semiconducting-dielectric material on a
substrate by thermal processes are disclosed, comprising heating a
thermally imageable donor element comprising a substrate and a transfer
layer of semiconductive material in conjunction with a dielectric. The
donor is exposed with the positive image of the desired pattern to be
formed on the receiver, such that the exposed portions of the layer of
semiconductive and dielectric material are simultaneously transferred,
forming the desired pattern of semiconductive and dielectric material on
the receiver. The semiconducting material can be patterned to form a thin
film transistor. The method can also be used to pattern a light-emitting
polymer or small molecule in conjunction with the charge injection layer
to form the light-emitting display for light-sensitive organic electronic
devices. Donor elements for use in the process are also disclosed.
Methods for forming thin film transistors and donor elements for use in
the processes, are also disclosed.