The present invention relates generally to compositions and associated methods for chemical-mechanical polishing of substrate surfaces having at least one feature thereon comprising tungsten and at least one feature thereon comprising a dielectric material. The compositions and associated methods of the invention result in similar removal rates of both the tungsten and the dielectric material. Compositions used in the methods of the present invention typically have a pH from about 1.5 to about 3.5 and comprise periodic acid and colloidal silica.