A semiconductor assembly providing even nucleation between silicon and
oxide surfaces for growing uniformly thin silicon nitride layers used in
semiconductor devices is disclosed. First, a nonconductive
nitride-nucleation enhancing monolayer is formed over a semiconductor
assembly having both nitridation receptive and resistive materials. For
purposes of the present invention, a nitride-nucleation enhancing
monolayer is a material that will readily accept the bonding of nitrogen
atoms to the material itself. Next, a silicon nitride layer is formed
over the nonconductive nitride-nucleation enhancing monolayer. The
nonconductive nitride-nucleation enhancing monolayer provides even
nucleation over both the nitridation receptive material and the
nitridation resistive material for silicon nitride, thereby allowing for
the growth of a uniformly thin nitride layer.