A nanotip electroluminescence (EL) diode and a method are provided for
fabricating said device. The method comprises: forming a plurality of Si
nanotip diodes; forming a phosphor layer overlying the nanotip diode;
and, forming a top electrode overlying the phosphor layer. The nanotip
diodes are formed by: forming a Si substrate with a top surface; forming
a Si p-well; forming an n+ layer of Si, having a thickness in the range
of 30 to 300 nanometers (nm) overlying the Si p-well; forming a reactive
ion etching (RIE)-induced polymer grass overlying the substrate top
surface; using the RIE-induced polymer grass as a mask, etching areas of
the substrate not covered by the mask; and, forming the nanotip diodes in
areas of the substrate covered by the mask.