Non-volatile memory device, driver, and method is described that utilizes
write or erase cycle tracking to interrupt or stop a non-volatile memory
programming or erase operation at a selected point to interrupt/stop
execution or simulate power loss at a specific point. This ability allows
for a deterministic and repeatable testing process of all write or erase
cycles of a non-volatile command where the state of floating gate memory
cells are changed in the non-volatile memory device. Additionally, this
ability to utilize write or erase cycle tracking to interrupt or stop a
non-volatile memory programming operation or erasing operation at any
selected point enables simulation of power loss at each point in a
selected operation that a non-volatile floating gate memory cell is
programmed or erased, allowing for improved, deterministic testing of the
power loss recovery cycle and faster code/design change verification.