An integrated electronic component having a substrate, a metal multilayer system, which is arranged at least on regions of the substrate, and a nonconductive layer, which is arranged on the metal multilayer system and has at least one contact hole, in which at least one carbon nanotube is grown on the metal multilayer system at the bottom of the contact hole. The metal multilayer system includes a high-melting metal layer, a metal separating layer, a catalyst layer, and a final metal separating layer. The high-melting metal layer is composed of at least one of tantalum, molybdenum, and tungsten. The metal separating layer is composed of aluminum, gold, or silver. The catalyst layer is composed of at least one of iron, cobalt, nickel, yttrium, titanium, platinum, and palladium, and a combination thereof. The final metal separating layer, which is arranged above the catalyst layer, is composed of aluminum.