The invention relates to a semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it. In the case of this semiconductor power device, zones (6) in charge compensation cells (27) that are arranged vertically and doped complimentarily to the semiconductor chip volume (5) are arranged in the entire chip volume, the complimentarily doped zones (6) extending right into surface regions (11) of the semiconductor power elements (7) and not projecting into surface regions (12) of semiconductor surface elements (1).