Provided is a multiple-gate metal oxide semiconductor (MOS) transistor and
a method for manufacturing the same, in which a channel is implemented in
a streamline shape, an expansion region is implemented in a gradually
increased form, and source and drain regions is implemented in an
elevated structure by using a difference of a thermal oxidation rate
depending on a crystal orientation of silicon and a geographical shape of
the single-crystal silicon pattern. As the channel is formed in a
streamline shape, it is possible to prevent the degradation of
reliability due to concentration of an electric field and current driving
capability by the gate voltage is improved because the upper portion and
both sides of the channel are surrounded by the gate electrodes. In
addition, a current crowding effect is prevented due to the expansion
region increased in size and source and drain series resistance is
reduced by elevated source and drain structures, thereby increasing the
current driving capability.