A magnetic sensing element using a thin film composed of an adequately crystallized Heusler alloy is provided. At least one of free magnetic layer and pinned magnetic layer includes a Heusler alloy layer. The Heusler alloy layer has a body-centered cubic (bcc) structure, in which equivalent crystal planes represented as [220] planes are preferentially oriented in the direction parallel to the layer surface. The Heusler alloy layer is disposed on a bcc layer having a body-centered cubic (bcc) structure, in which equivalent crystal planes represented as [110] planes are preferentially oriented in the direction parallel to the layer surface.

 
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> Magnetoresistance effect device having a bi-crystal structure composed of main grains each having a plurality of sub-grains

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