An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.

 
Web www.patentalert.com

< Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device

> Top-emitting nitride-based light emitting device and method of manufacturing the same

~ 00414