Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.