A method of fabricating a nonvolatile memory using quantum dots is
disclosed. An example method sequentially forms a first insulation layer
and a second insulation layer on a substrate where a predetermined device
is formed. The example method also forms a hard mask by etching the
second insulation layer, deposits silicon on the substrate where the hard
mask is formed, forms quantum dots by etching the silicon through an
etchback process, removes the hard mask, forms a third insulation layer
on the substrate where the quantum dots are formed, and deposits a
conductive layer on the third insulation and patterning it to form a
gate.