A final mask layout (20') is produced by producing a provisional auxiliary mask layout in accordance with a predefined electrical circuit diagram and converting it into the final mask layout (20') with the aid of an OPC method. Before carrying out the OPC method, with the provisional auxiliary mask layout (100), firstly a modified auxiliary mask layout (100') is formed by arranging at least one optically non-resolvable auxiliary structure (130) between two mask structures (110, 120) of the provisional auxiliary mask layout (100). The optically non-resolvable auxiliary structure (130) is positioned between the two mask structures (110, 120) in a manner dependent on the structure size (B1, B2) of the two mask structures, (110, 120). An eccentric offset (V) of the optically non-resolvable auxiliary structure (130) between the two mask structures is effected in the case of differing structure sizes (.DELTA.B) of the two mask structures.