A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

 
Web www.patentalert.com

< Method and apparatus for preparing a dialkyl carbonate, and its use in the preparation of diaryl carbonates and polycarbonates

> Ce,Pr-coactivated strontium magnesium aluminate phosphor and lamp containing same

~ 00420