The TTM sensor includes a semiconductor structure and a spin valve
structure, where the semiconductor structure includes at least two
layers. Two of the three leads of the TTM sensor are engaged to the
semiconductor layers, where a semiconductor junction between the layers
is disposed between the two leads. Generally, the junction may comprise a
P-N junction between a P-type layer and an N-type layer and in an
embodiment of the present invention the collector lead is engaged to the
P-type semiconductor layer and the base lead is connected to the N-type
semiconductor layer. The spin valve structure is fabricated upon the
semiconductor structure and the emitter is engaged to the spin valve
structure. In this configuration, a free magnetic layer of the spin valve
structure is fabricated upon the semiconductor material, such that a
schottky barrier is formed between the metallic free magnetic layer
material and the semiconductor material.