The TTM sensor includes a semiconductor structure and a spin valve structure, where the semiconductor structure includes at least two layers. Two of the three leads of the TTM sensor are engaged to the semiconductor layers, where a semiconductor junction between the layers is disposed between the two leads. Generally, the junction may comprise a P-N junction between a P-type layer and an N-type layer and in an embodiment of the present invention the collector lead is engaged to the P-type semiconductor layer and the base lead is connected to the N-type semiconductor layer. The spin valve structure is fabricated upon the semiconductor structure and the emitter is engaged to the spin valve structure. In this configuration, a free magnetic layer of the spin valve structure is fabricated upon the semiconductor material, such that a schottky barrier is formed between the metallic free magnetic layer material and the semiconductor material.