A memory device includes a mechanical element that exhibits distinct
bistable states under amplitude modulation. The states are dynamically
bistable or multi-stable with the application of a drive signal of a
given frequency. The natural resonance of the element in conjunction with
a hysteretic effect produces distinct states over a specific frequency
range. Devices with multiple elements that respond to different frequency
ranges provided on a common contact are formed with improved density. The
devices may be excited and read with magnetomotive, capacitive,
piezoelectric and/or optical methods. The devices may be planar oriented
or out of plane oriented to permit three dimensional memory structures.
DC biases may be used to shift frequency responses to permit an alternate
method for differentiating states of the element.