TOF and color sensing detector structures have x-axis spaced-apart y-axis
extending finger-shaped gate structures with adjacent source collection
regions. X-dimension structures are smaller than y-dimension structure
and govern performance, characterized by high x-axis electric fields and
rapid charge movement, contrasted with lower y-axis electric fields and
slower charge movement. Preferably a potential barrier is implanted
between adjacent gates and a bias gate is formed intermediate a gate and
associated source region. Resultant detector structures can be operated
at the more extreme gate voltages that are desirable for high
performance.