A magnetic memory device which can be formed with a further reduced size. The magnetic memory device includes: a plurality of memory cells each including at least one magnetoresistive effect revealing body and arranged along a pair of lines; a plurality of auxiliary write lines arranged so that each memory cell is provided with one auxiliary write line, each auxiliary write line being connected to the pair of lines, for introducing write currents flowing through the pair of lines to the vicinity of the magnetoresistive effect revealing body; and transistors arranged so that one transistor is inserted in each auxiliary write line, for allowing the write current to flow bidirectionally through the auxiliary write line in an operating state of the transistors.