As a p-type ohmic contact electrode formation technique in a Group II-VI
compound semiconductor, there is provided a material for forming an
electrode that is low in resistance, stable, and not toxic, and is
excellent in productivity, thereby providing an excellent semiconductor
element. A semiconductor electrode material in the form of a material
represented by a composition formula AxByCz where A: at least one element
selected from Group 1B metal elements, B: at least one element selected
from Group 8 metal elements, C: at least one element selected from S and
Se), where X, Y, and Z are such that X+Y+Z=1, 0.20.about.X.about.0.35,
0.17.about.Y.about.0.30, and 0.45.about.Z.about.0.55.