A chemical mechanical polishing pad which has a storage elastic modulus E'(30.degree. C.) at 30.degree. C. of 120 MPa or less and an (E'(30.degree. C.)/E'(60.degree. C.)) ratio of the storage elastic modulus E'(30.degree. C.) at 30.degree. C. to the storage elastic modulus E'(60.degree. C.) at 60.degree. C. of 2.5 or more when the storage elastic moduli of a polishing substrate at 30.degree. C. and 60.degree. C. are measured under the following conditions: initial load: 100 g maximum bias: 0.01 % frequency: 0.2 Hz. A chemical mechanical polishing process makes use of the above chemical mechanical polishing pad. The chemical mechanical polishing pad can suppress the production of a scratch on the polished surface in the chemical mechanical polishing step and can provide a high-quality polished surface, and the chemical mechanical polishing process provides a high-quality polished surface by using the chemical mechanical polishing pad.