A semiconductor laser having a semiconductor chip (1) which contains an active layer (5) and emits radiation in a main radiating direction (6). The active layer (5) is structured in a direction perpendicular to the main radiating direction (6) in order to reduce heating of the semiconductor chip (1) by spontaneously emitted radiation (10).

 
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< Multi-beam semiconductor laser

> Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho.sup.3+, Sm.sup.3+, Eu.sup.3+, Dy.sup.3+, Er.sup.3+, and Tb.sup.3+ is excited with GaN-based compound laser diode

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