A device including an IGBT a formed on a chip of silicon consisting of a P
type substrate with an N type epitaxial layer that contains a first P
type region and a termination structure, and having a first P type
termination region that surrounds the first region, a first electrode in
contact with the first termination region, and a second electrode shaped
in the form of a frame close to the edge of the chip and connected to a
third electrode in contact with the bottom of the chip. A fourth
electrode made in one piece with the first electrode is in contact with
the first region. The termination structure also comprises a fifth
electrode in contact with the epitaxial layer along a path parallel to
the edge of the first termination region and connected to the second
electrode and a second P type termination region that surrounds the fifth
electrode and a sixth electrode, and which is in contact with the second
termination region, connected to the first electrode.