A method for forming a semiconductor device is provided. The method comprises providing a substrate with recessed gates and deep trench capacitor devices therein. Protrusions of the recessed gates and upper portions of the deep trench capacitor devices are revealed. Spacers are formed on sidewalls of the upper portions and the protrusions. Buried portions of conductive material are formed in spaces between the spacers. The substrate, the spacers and the buried portions are patterned to form parallel shallow trenches for defining buried bit line contacts and capacitor buried surface straps. A layer of dielectric material is formed in the shallow trenches. Word lines are formed across the recessed gates. Bit lines are formed to electrically connect the buried bit line contacts without crossing the capacitor buried surface straps, and stack capacitors are formed to electrically connect with the capacitor buried surface straps. A semiconductor device is also provided.