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The invention aims to provide a peeling method without damaging a peeled
off layer and to allow separation of not only a peeled off layer having a
small surface area but also the entire surface of a peeled off layer
having a large surface area. Further, the invention aims to provide a
lightweight semiconductor device by sticking a peeled off layer to a
variety of substrates and its manufacturing method. Especially, the
invention aims to provide a lightweight semiconductor device by sticking
a variety of elements such as TFT to a flexible film and its
manufacturing method. Even in the case a first material layer 11 is
formed on a substrate and a second material layer 12 is formed adjacently
to the foregoing first material layer 11, and further, layered film
formation, heating treatment at 500.degree. C. or higher or laser beam
radiating treatment is carried out, if the first material layer has a
tensile stress before the peeling and the second material layer has a
compressive stress, excellent separation can easily be carried out by
physical means in the interlayer or interface of the second material
layer 12.
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< Light supply unit, illumination unit, and illumination system
> Method of manufacturing a thin film transistor, thin film transistor, thin film transistor circuit, electronic device, and electronic apparatus
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