A combination of a thin-film .mu.c-Si and a-Si:H containing diode
structure characterized by an ultra-high current density that exceeds
1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed
on the substrate; an n-layer of .mu.c-Si deposited the bottom metal
layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of
a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the
buffer layer; and a top metal layer deposited on the p-layer.
