A non-volatile memory cell includes a switchable resistor memory element
in series with a switch device. An array of such cells may be programmed
using only positive voltages. A method for programming such cells also
supports a direct write of both 0 and 1 data states without requirement
of a block erase operation, and is scalable for use with relatively low
voltage power supplies. A method for reading such cells reduces read
disturb of a selected memory cell by impressing a read bias voltage
having a polarity opposite that of a set voltage employed to change the
switchable resistor memory element to a low resistance state. Such
programming and read methods are well suited for use in a
three-dimensional memory array formed on multiple levels above a
substrate, particularly those having extremely compact array line drivers
on very tight layout pitch.