Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR.sub.2--Si(R'.sub.2)--Si(R'.sub.2)--NR.sub.2 (amino(di)silanes), R.sub.3--Si--N.dbd.N.dbd.N (silyl azides), R'.sub.3--Si--NR--NR.sub.2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R' comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.