The invention relates to a gate control device 10 of a power semiconductor component 11 of the IGBT type. A ramp generator circuit 20 delivers a reference gate voltage at its output. A stage for the current amplification of the said reference voltage delivers a gate current to the IGBT component, this amplification stage comprising an ignition circuit 30 and a rapid extinction circuit 40. A slow extinction circuit 50 is connected between the gate G of the IGBT component and the output of the generator circuit. A circuit 60 for the detection of a collector-emitter voltage of the component is connected to a feedback circuit 70 delivering a feedback signal 71 that acts on the rapid extinction circuit 40 and on the output 22 of the generator circuit.