The present invention relates to a method for fabricating a metal interconnection line with use of a barrier metal layer formed in a low temperature. The method includes the steps of: forming an inter-layer insulation layer on a substrate; etching predetermined regions of the inter-layer insulation layer to form a plurality of contact openings; forming an ohmic metal layer on the contact openings and the etched inter-layer insulation layer; forming a seed layer on the ohmic metal layer; forming a metal layer on the seed layer and nitriding the metal layer in a repeated number of times to form a barrier metal layer; and forming a metal interconnection line on the barrier metal layer by burying the contact openings.