A method of manufacturing a semiconductor device, comprises the steps of:
forming a first insulating film on a first substrate; forming a second
insulating film on the first insulating film; forming an amorphous
silicon film on the second insulating film; holding a metal element that
promotes the crystallization of silicon in contact with a surface of the
amorphous silicon film; crystallizing the amorphous silicon film through
a heat treatment to obtain a crystalline silicon film; forming a
thin-film transistor using the crystalline silicon film; forming a
sealing layer that seals the thin-film transistor; bonding a second
substrate having a translucent property to the sealing layer; and
removing the first insulating film to peel off the first substrate.