A memory includes at least one memory segment that includes an array of memory cells arranged in a plurality of columns, each of the plurality of columns having a corresponding bitline pair. An address decoder includes a row decoder and a column decoder that addresses a selected one of the array of memory cells in a selected one of the plurality of columns in response to a memory address. A sense amplifier generates a data output by sensing a differential voltage from the corresponding bitline pair of the selected one of the plurality of columns in response to a sense amp enable signal. A sense amp enable signal generator generates the sense amp enable signal with adjustable timing, based on sense amp feedback signals.