A method for implementing a desired offset in device characteristics of an integrated circuit includes forming a first device of a first conductivity type on a first portion of a substrate having a first crystal lattice orientation, and forming a second device of the first conductivity type on a second portion of the substrate having a second crystal lattice orientation. The carrier mobility of the first device formed on the first crystal lattice orientation is greater than the carrier mobility of the second device formed on the second crystal lattice orientation.

 
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< Low threshold voltage PMOS apparatus and method of fabricating the same

> Component including a fixed element that is in a silicon layer and is mechanically connected to a substrate via an anchoring element and method for its manufacture
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