A flash memory is managed by reserving one or more cells as flag cells to represent the number N of bits to store in the cells of a memory block, selecting the value of N from at least three candidates, and programming the flag cell(s) to represent the selected value. A flash memory is managed by selecting a value of the number N>2 of bits to store in the cells of a portion (e.g. a block or page) of the memory, reserving one other cell of the memory as a flag cell to represent how many bits actually are stored in each cell of the portion, and, as the cells of the portion are successively programmed with 1.ltoreq.n.ltoreq.N bits, programming the flag cell to represent n.

 
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> Structure and Method for Biasing Phase Change Memory Array for Reliable Writing

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