A method of forming a piezo-resistive sensor, comprising a piezo-resistor, a leadout resistor, and an insulator structure is provided. A Silicon-On-Insulator (SOI) substrate is provided having an epitaxial layer, a dielectric layer, and a bulk substrate layer. A mask layer is formed on top of the epitaxial layer. The mask layer defines where the piezo-resistor and leadout resistors are to be located by creating first exposed portions of the epitaxial layer. A silicon dioxide layer (SiO.sub.2) is grown in a Local Oxidation of Silicon (LOCOS) process for a predetermined time on the first exposed portions based on the desired thickness of the piezo-resistor, where the-piezo resistor is located below the SiO.sub.2 layer. The thickness of the leadout resistor, and therefore the parasitic leadout resistance, is determined by the original thickness of the epitaxial layer and can be maintained independent of the piezo-resistor thickness.