A semiconductor pressure sensor can reduce the damage of bonding wires to increase their life time even under an environment in which the temperature and pressure change rapidly and radically. The semiconductor pressure sensor includes a package (1) made of a resin and having a concave portion (1a), a lead (2) formed integral with the package (1) by insert molding, with its one end exposed into the concave portion (1a) and its other end extended from the package (1) to the outside, a sensor chip (3) arranged in the concave portion (1a) for detecting pressure, and a bonding wire (4) electrically connecting the sensor chip (3) and the lead (2) with each other. An interface between the lead (2) and the package (1) on the side of the concave portion (1a) is covered with a first protective resin portion (6) of electrically insulating property, and the bonding wire (4) is covered with a second protective resin portion (7) that is softer than the first protective resin portion (6).