Reading and verify operations are performed on non-volatile storage
elements using temperature-compensated read voltages for unselected word
lines, and/or for select gates such as drain or source side select gates
of a NAND string. In one approach, while a read or verify voltage is
applied to a selected word line, temperature-compensated read voltages
are applied to unselected word lines and select gates. Word lines which
directly neighbor the selected word line can receive a voltage which is
not temperature compensated, or which is temperature-compensated to a
reduced degree. The read or verify voltage applied to the selected word
line can also be temperature-compensated. The temperature compensation
may also account for word line position.