A PLZT film (30) is formed as the material film of a capacitor dielectric film and a top electrode film (31) is formed on the PLZT film (30). The top electrode film (31) comprises two IrO.sub.x films having different composition. Subsequently, back face of a semiconductor substrate (11) is cleaned and an Ir adhesion film (32) is formed on the top electrode film (31). Substrate temperature is set at 400.degree. C. or above at that time. Thereafter, a TiN film and a TEOS film are formed sequentially as a hard mask. In such a method, carbon remaining on the top electrode film (31) after cleaning the back face is discharged into the chamber while the temperature of the semiconductor substrate (11) is kept at 400.degree. C. or above in order to form the Ir adhesion film (32). Consequently, adhesion is enhanced between a TiN film being formed subsequently and the Ir adhesion film (32) thus preventing the TiN film from being stripped.