A method of forming a fin field effect transistor on a semiconductor
substrate includes forming an active region in the substrate, forming an
epitaxial layer on the active region, and removing a portion of the
epitaxial layer to form a vertical fin on the active region. The fin has
a width that is narrower than a width of the active region. Removing a
portion of the epitaxial layer may include oxidizing a surface of the
epitaxial layer and then removing the oxidized surface of the epitaxial
layer to decrease the width of the fin. The epitaxial layer may be doped
in situ before removing a portion of the epitaxial layer. The method
further includes forming a conductive layer on a top surface and on
sidewalls of the fin. Related transistors are also discussed.