The nitride semiconductor laser device has a counter electrode structure where contact resistance is reduced and manufacturing methods thereof are provided. The nitride semiconductor laser device comprises a nitride semiconductor substrate having a first main surface and a second main surface. A nitride semiconductor layer is stacked on the first main surface of the nitride semiconductor substrate. A ridge-shaped stripe is formed in the nitride semiconductor layer, and a resonance surface forms an optical waveguide in the direction perpendicular to the length of the ridge-shaped stripe. A first region having a crystal growth facet in the (0001) plane and a second region on the first main surface or the second main surface are provided. Further, a recess is formed in the second region of the first main surface and/or the second main surface. A ridge-shape stripe is formed over the first main surface of the nitride semiconductor substrate.