A surface-emitting type semiconductor laser includes: a first mirror; an
active layer formed above the first mirror; a second mirror formed above
the active layer; and a current constricting section formed above or
below the active layer, wherein the second mirror has a plurality of
concave sections arranged within a plane perpendicular to a light
emission direction, and a light confining region surrounded by the
concave sections is formed inside a region surrounded by the current
constricting section as viewed in a plan view.