An apparatus and method for processing a substrate is provided. The
apparatus comprises a reaction chamber, a substrate holder within the
chamber, and first and second injector components. The reaction chamber
has an upstream end and a downstream end, between which the substrate
holder is positioned. The substrate holder is configured to support a
substrate so that the substrate is within a plane extending generally
toward the upstream and downstream ends. The first injector component is
at the upstream end of the chamber and is configured to inject a first
thin gas curtain toward a substrate supported by the substrate holder.
The first injector component is configured to inject the first curtain
generally along a first plane that is parallel to a first side of the
substrate. The second injector component is configured to inject a second
thin gas curtain toward the first side of the substrate. The second
injector component is configured to inject the second gas curtain
generally along a second plane oriented at an angle with respect to the
first plane. The angled flows of source gases have reduced interdiffusion
volume above the substrate, preferably resulting in deposition
substantially along a line extending across the center of the substrate.
The substrate can be rotated during deposition to produce a substantially
uniform film on the substrate.