A semiconductor memory device includes a semiconductor substrate having a
first region and a second region, a transistor placed in the first region
of the semiconductor substrate, a first insulating film formed on the
semiconductor substrate in the first and second regions and on the
transistor, a first ferroelectric capacitor formed on the first
insulating film in the first region and electrically connected to the
transistor, a hydrogen barrier film formed above the first ferroelectric
capacitor and above the first insulating film in the first and second
regions, a first contact penetrating the hydrogen barrier film in the
first region and electrically connected to the first ferroelectric
capacitor, and a second contact which penetrates the hydrogen barrier
film in the second region and which is in a floating state.