A semiconductor device which can prevent a leak current between a silicide layer on a polysilicon and another part, as well as a manufacturing process therefor. The semiconductor device includes neighboring n- and p-type polysilicons; and a silicide layer thereon extending from the n-type polysilicon to the p-type polysilicon. The silicide layer is formed over the upper surfaces of the n- and p-type polysilicons except the periphery thereof.