A nonvolatile ferroelectric memory in an RFID device includes a plurality of word lines, and a plurality of banks each including a cell array. The cell array of one of the banks includes a region to be initialized, wherein the region includes a plurality of memory unit cells each including a ferroelectric capacitor, the memory unit cells being connected to the word lines. The ferroelectric capacitor of a first one of the memory unit cells is connected between a plate line and a cell transistor. The ferroelectric capacitor of a second one of the memory unit cells has one terminal connected to a ground terminal. The first one and the second one of the memory cells are respectively connected to a first one and a second one of the word lines, the first one and the second one of the word lines being connected to each other.