An MRAM circuit includes an MRAM array having a plurality of operational
MRAM elements and a reference cell made up of one or more reference MRAM
elements. A plurality of program lines within a first region are cladded
with a flux-concentrating layer configured to focus a generated magnetic
field while the portions of the program lines within a second region are
uncladded so that the generated magnetic field is unfocused. Generally,
the first region is associated with the operational MRAM elements and the
second region is associated with the reference cell.