A memory device comprising a first pan-shaped electrode having a side wall with a top side, a second pan-shaped electrode having a side wall with a top side and an insulating wall between the first side wall and the second side wall. The insulating wall has a thickness between the first and second side walls near the respective top sides. A bridge of memory material crosses the insulating wall, and defines an inter-electrode path between the first and second electrodes across the insulating wall. An array of such memory cells is provided. The bridges of memory material have sub-lithographic dimensions.