A MOSFET-type semiconductor device includes a monocrystalline semiconductor layer formed in a shape of a thin wall on a insulating film, a gate electrode straddling over the semiconductor layer around the middle portion of the wall-shaped semiconductor layer via a gate insulating film, source and drain regions formed at the both ends of the semiconductor layer, a first metal-semiconductor compound layer formed on one of the side walls of each of source and drain regions of the semiconductor layer, and a second metal-semiconductor compound layer having a different composition and Shottky barrier height from that of the first metal-semiconductor compound layer on the other side wall of each of source and drain regions of the semiconductor layer.