Non-volatile memory cells employing a transition metal oxide layer as a
data storage material layer are provided. The non-volatile memory cells
include a lower and upper electrodes overlapped with each other. A
transition metal oxide layer pattern is provided between the lower and
upper electrodes. The transition metal oxide layer pattern is represented
by a chemical formula M.sub.xO.sub.y. In the chemical formula, the
characters "M", "O", "x" and "y" indicate transition metal, oxygen, a
transitional metal composition and an oxygen composition, respectively.
The transition metal oxide layer pattern has excessive transition metal
content in comparison to a stabilized transition metal oxide layer
pattern. Methods of fabricating the non-volatile memory cells are also
provided.