The features with size at least in one direction 1 .mu.m growth method was developed by modifying liquid phase epitaxy. Number of processes was developed where duration and amplitude of the cooling pulse at the substrate interface were chosen in order to form low-dimensional features before system return to the equilibrium condition. This method allows obtaining low-dimensional features with observed quantum effect such as quantum layers, dots and superlattices. The shape of the features strongly depends on substrate orientation, stress and growth conditions.